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POWER-ON RESET
Power monitor comparators: CHK12 and CHK5
Vth(12) 12 V threshold voltage CHK12 open-circuit 9.05 9.40 9.75 V
Vhys(12) hysteresis on VDDA2 80 115 150 mV
Vth(5) 5 V threshold voltage CHK5 open-circuit 4.2 4.3 4.4 V
Vhys(5) hysteresis on VDDD 35 50 70 mV
RL12 low internal bridge CHK12 short-circuited to 20 27.5 35 k&!
resistor on CHK12 2.55 V
RH12 high internal bridge CHK12 short-circuited to 60 80 100 k&!
resistor on CHK12 ground
RL5 low internal bridge CHK5 short-circuited to 37 46 55 k&!
resistor on CHK5 VDDA1
RH5 high internal bridge CHK5 short-circuited to 24 32 40 k&!
resistor on CHK5 ground
Power-on reset generator: CPOR and POR
VOL LOW-level output IOL =1mA --0.5 V
voltage
Rpu pull-up resistor POR short-circuited to 10 15 20 k&!
ground
ICPOR(source) source current for -3.5 -2.5 -1.5 µA
CPOR
Vth(CPOR) CPOR threshold functional test - 2.55 - V
voltage
SPINDLE DRIVER
BEMF comparators: ACROSS, BCROSS and CCROSS
VI(CM) common mode input running mode -0.7 - VDDA2 + 0.7 V
voltage
II(bias) input bias current note 6 -10 - 0 µA
1998 Nov 02 42
Philips Semiconductors Product specification
Disk drive spindle and VCM with
OM5193H
servo controller
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Vsw(comp) comparator switching only tested on wafer -20 - +20 mV
level
Vsw(tol) tolerance on the only tested on wafer -3 - +3 mV
comparator switching
level
"Vsw variation in comparator note 6 -4.2 - +4.2 mV
switching levels for one
IC
Vi(hys) input voltage note 6 - 0.5 - mV
hysteresis
VOL LOW-level output sink current = -40 µA; --0.45 V
voltage only tested on wafer
VOH HIGH-level output source current = 40 µA; VDDA1 - 0.5 --V
voltage only tested on wafer
Output drivers: MOTA, MOTB and MOTC
Rds(on)(source) high-side driver output IO = 1.0 A at - 0.36 0.45 &!
resistance Tamb =25°C
IO = 1.0 A at - 0.56 0.65 &!
Tamb = 125 °C
Rds(on)(sink) low-side driver output IO = 1.0 A at - 0.24 0.35 &!
resistance Tamb =25°C
IO = 1.0 A at - 0.44 0.55 &!
Tamb = 125 °C
VSLEW slew rate voltage ISLEW =20µA - 2.55 - V
SR slew rate open-loop; note 9 0.09 - 0.23 V/µs
ISLEW =30µA; note 9 0.32 - 0.87 V/µs
ISPRUN spindle current control VSPCC = 1.25 V; 380 400 420 mA
RSENSE = 0.25 &!
VCLP overvoltage protection ISVDMOS >10mA - 15.8 - V
circuit
IL(SP) spindle power stage --1mA
leakage current
Sense amplifier: SPSENSEL and SPSENSEH
II input current on only tested on wafer 10 - 10 µA
MOTSENSE
VIO input offset voltage note 6 - 3 - mV
Gv sense amplifier gain only tested on wafer 9.8 10 10.2 V/V
TC temperature note 6 - 200 - ppm/°C
coefficient of sense
amplifier gain
Control amplifier: SPCC and SPCCOUT
VSPCC0 spindle zero-current only tested on wafer; 230 250 270 mV
reference Tamb =25°C
1998 Nov 02 43
Philips Semiconductors Product specification
Disk drive spindle and VCM with
OM5193H
servo controller
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
fcut(ol) open-loop cut-off CSPCCOUT minimum --3 kHz
frequency at 0 dB value = 10 nF for stability
when closed loop;
note 10
Logic decoder: COMA, COMB and COMC
ILI input leakage current VI = 0 to VDD; only tested -1 - +1 µA
on wafer
VOICE COIL MOTOR DRIVER
VCM preamplifiers: VCMIN and REF2V5
II input current on VCMIN 1 - 0 µA
VIO input offset voltage relative to Vref2V5 for zero -10 - +10 mV
output current
fG unity gain frequency note 6 2 3.5 - MHz
VCM driver amplifiers
tCOD cross-over distortion note 6 - 35µs
delay
SRVCM VCM slew rate CL = 10 pF; note 6 - 1 - V/µs
fG unity gain frequency note 6 1.5 --MHz
Gv(SD) slave driver voltage 1.05 1.15 1.25
gain
Rds(on)(source) high-side driver output IO = 1.0 A at - 0.45 0.55 &!
resistance Tamb =25°C
IO = 1.0 A at - 0.65 0.75 &!
Tamb = 125 °C
Rds(on)(sink) low-side driver output IO = 1.0 A at - 0.35 0.45 &!
resistance Tamb =25°C
IO = 1.0 A at - 0.55 0.65 &!
Tamb = 125 °C
VCLP overvoltage protection ISVDMOS >10mA - 15.1 - V
circuit
ILI(VCM) VCM power stage --1mA
leakage current
VCM sense amplifier: VCMSENSEL and VCMSENSEH
VI input voltage -0.7 - VDDA2 + 0.7 V
II input current Vref2V5 = 2.5 V -100 - +250 µA
Gv sense amplifier gain under all conditions 3.8 4.0 4.2
IO(sink) output sink current Tj = 0 to 140 °C; note 11 600 -- µA
IO(source) output source current Tj = 0 to 140 °C; note 12 ---500 µA
VOO output offset voltage VVCMSENSEH = -15 10 +35 mV
VVCMSENSEL =6V
GB gain-bandwidth product note 6 5 8 - MHz
1998 Nov 02 44
Philips Semiconductors Product specification
Disk drive spindle and VCM with
OM5193H
servo controller
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
SR slew rate RL =10k&!; CL = 60 pF; 1.7 - 5.3 V/µs
note 6
Gv(ol) open-loop voltage gain note 6 75 80 - dB
SVRR supply voltage ripple f = 100 Hz; RL =10k&!; 90 100 - dB
rejection CL
CMRR common mode note 6 90 --dB
rejection ratio
BRAKE-AFTER-PARK DELAY MODE
Park and brake power
VNMBP normal mode voltage 12.0 12.55 12.9 V
on brake power
VNMBD normal mode voltage 12.0 12.55 12.9 V
on brake delay
IBPR brake power park VBRAKEPOWER =12V; 135µA
current VBRAKEDELAY >VBDT
IBPB brake power brake VBRAKEPOWER =12V; --1µA
current VBRAKEDELAY =0
Park
VSWITCHGATE voltage on brake-after-park mode --0.1 V
SWITCHGATE during
brake-after-park
Ibrake park voltage current VBRAKEPOWER =12V; -12 -9 -6 µA
source VCLAMP =8V;
VBRAKEDELAY >VBDT
VIVCM(max) maximum park voltage pin PARKVOLT - 1.95 - V
open-circuit;
VCLAMP =8V;
VBRAKEDELAY >VBDT;
Tamb =25°C; note 13
VIVCM(park) voltage on IVCM during VPARKVOLT =1V; 0.9 1 1.1 V
park VBRAKEPOWER =12V;
VCLAMP =8V;
VBRAKEDELAY >VBDT
VNIVCM(park) voltage on NIVCM VPARKVOLT =1V; - 15 50 mV
during park VBRAKEPOWER =12V;
VCLAMP =8V;
VBRAKEDELAY >VBDT
VMOTx(park) voltage on MOTx VBRAKEDELAY >VBDT; 369V
during park (high note 14
impedance state)
Rds(on)(park) switch park resistor RL = 20.2 &!; - 0.35 2 &!
Tamb =25°C
TCRds(on)(park) temperature coefficient note 15 - 2 - m&!/°C
1998 Nov 02 45
Philips Semiconductors Product specification
Disk drive spindle and VCM with
OM5193H
servo controller
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Brake
VBDT brake delay time VBRAKEPOWER = 12 V 1.1 2.1 3.1 V
threshold voltage
ILI brake delay leakage -500 - +500 nA
current
Rds(on)(brake) lower DMOS resistor IMOTx = 200 mA; - 0.24 0.5 &!
during a brake Tamb =25°C
TCRds(on)(brake) temperature coefficient note 16 - 2 - m&!/°C
Precharge
VIVCM voltage on pin IVCM VBRAKEPOWER =12V; - VDDD - VBE - V
VBRAKEDELAY =0;
note 17
VNIVCM voltage on pin NIVCM VBRAKEPOWER =12V; - VDDD - VBE - V
VBRAKEDELAY =0;
note 17
VVCMIN voltage on pin VCMIN VBRAKEPOWER =12V; --0.2 V
VBRAKEDELAY =0
Notes
1. VDDD =5V±10%; VDDA2 =VDDA2POWER =12V±10%; Tamb = 0 to 70 °C; unless otherwise specified.
2. VDDD =VDDA1 =5V±10%; Tamb = 0 to 70 °C.
1 2.5
3. LSB on the 1.5 to 3.5 V range is equal to D 512 V; LSB on the 0 to 5 V range is equal to D 512 V.
4. Integral non-linearity means the deviation of a code from a straight line passing through an actual end-point and the
actual centre. INL and DNL are calculated by dividing the output transfer function in 2 parts: minimum value to centre
value and centre value to maximum value.
5. The temperature dependency of the resistance is expressed as follows:
2
Rsh (T) = Rsh (Tref) × (1 + 1.1e 3 × (T  Tref) + 1.1e  6 × (T  Tref)
where Rsh (T) = resistance at desired temperature; Rsh (Tref) = resistance at reference temperature;
T = desired temperature and Tref =27°C.
6. Guaranteed by design. [ Pobierz całość w formacie PDF ]

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